Prof. Iman Roqan | Semiconductors | Best Researcher Award
Professor at King Abdullah University of Science and Technology | Saudi Arabia
Prof. Iman Roqan is an internationally recognized researcher and academic leader, currently serving as a Professor and Head of the Semiconductor and Material Spectroscopy Group at King Abdullah University of Science and Technology (KAUST), Saudi Arabia. With a distinguished career spanning over two decades, she has made pioneering contributions to semiconductor physics, optoelectronic materials, nanostructures, and spintronics. She holds a BSc (Hons.) in Physics and Education from Umm Al-Qura University, an MSc in Photonics and Optoelectronics Devices from the University of St Andrews and Heriot-Watt University, and a Ph.D. in Applied Physics (Semiconductors) from the University of Strathclyde, UK. Prof. Iman Roqan’s groundbreaking work focuses on developing advanced III-Nitride and oxide-based semiconductors, novel nanostructures, and quantum materials for applications in LEDs, lasers, UV detectors, and spin-optoelectronics. She has published 121 refereed papers, authored book chapters, and holds 11 patents in semiconductor technology and nanofabrication techniques. With 5,365 citations, an h-index of 47, and global collaborations across leading research institutions, Prof. Iman Roqan is regarded as a visionary scientist driving innovation in material science and photonic applications. Her leadership at KAUST has significantly shaped the field of spectroscopy and semiconductor device engineering.
Professional Profile
Scopus | Google Scholar
Education
Prof. Iman Roqan’s academic journey reflects her exceptional dedication to advancing knowledge in physics, photonics, and semiconductor science. She earned her BSc (Hons.) in Physics and Education from Umm Al-Qura University, Saudi Arabia, laying a solid foundation in applied physics and pedagogy. She then pursued an MSc in Photonics and Optoelectronics Devices at the University of St Andrews and Heriot-Watt University, UK, where her thesis focused on the optical properties of II-VI semiconductor quantum dots under the supervision of Prof. Richard J. Warburton. This research provided her with expertise in quantum materials and optoelectronic device engineering. She completed her Ph.D. in Applied Physics (Semiconductors) at the University of Strathclyde, Glasgow, where she conducted innovative research on the optical, structural, and magnetic properties of rare-earth-doped III-Nitrides under the mentorship of Dr. Carol Trager-Cowan and Prof. Kevin P. O’Donnell. Her doctoral research marked a significant step toward understanding wide bandgap materials and their applications in UV optoelectronics. Prof. Iman Roqan’s diverse academic training across top-tier institutions has equipped her with interdisciplinary expertise, enabling her to bridge fundamental material science and advanced semiconductor technologies.
Professional Experience
Prof. Iman Roqan has established herself as a distinguished academic and research leader through her extensive professional journey. She has been a Professor at King Abdullah University of Science and Technology (KAUST), Saudi Arabia, where she leads the Semiconductor and Material Spectroscopy Group. Her leadership role involves directing multidisciplinary research programs, mentoring graduate students, and developing cutting-edge technologies in semiconductors and nanophotonics. Prof. Roqan has also served as a Visiting Researcher at the University of Strathclyde and an Academic Visitor at Imperial College London, where she collaborated with leading scientists on next-generation optoelectronic materials. Her expertise has been instrumental in developing spectroscopy laboratories, consulting on industrial semiconductor projects, and advising on photonic device fabrication. She has successfully led multiple research initiatives on III-Nitride materials, perovskites, and quantum dot technologies in collaboration with globally renowned institutions. Additionally, Prof. Iman Roqan has served as a consultant for King Fahd University of Petroleum and Minerals, spearheading projects involving Li-doped ZnO and other advanced materials. Her multifaceted professional experience demonstrates her ability to translate fundamental research into real-world innovations, significantly impacting academia, industry, and global semiconductor technologies.
Research Interests
Prof. Iman Roqan’s research interests lie at the intersection of semiconductor physics, nanomaterials, and optoelectronic device engineering, focusing on developing materials and technologies that enable high-performance applications. Her work primarily explores wide bandgap semiconductor nanostructures such as III-Nitrides and oxide semiconductors for ultraviolet (UV) and visible light-emitting devices, high-efficiency LEDs, lasers, and UV detectors. She is also deeply engaged in advancing spintronics by engineering quantum materials and spin-optoelectronic devices to achieve enhanced functionalities at the nanoscale. Another significant area of her research involves perovskite-based materials for next-generation optoelectronics, enabling breakthroughs in low-cost and flexible device architectures. Prof. Iman Roqan integrates theoretical modeling with advanced spectroscopy and nanofabrication techniques to understand and manipulate material properties at the atomic level. Her ongoing projects focus on developing novel nanostructures, such as GaN-based LEDs, MnO quantum dots, and ZnO-based spin devices, aimed at revolutionizing photonics, energy conversion, and information technologies. By combining experimental innovations with computational analysis, Prof. Iman Roqan drives impactful research that addresses the challenges of modern semiconductor technologies while paving the way for scalable, cost-effective, and energy-efficient optoelectronic solutions.
Research Skills
Prof. Iman Roqan possesses exceptional expertise in semiconductor spectroscopy, nanofabrication, and materials characterization, supported by her extensive experience across interdisciplinary domains. She is proficient in designing and synthesizing III-Nitride and oxide-based semiconductor nanostructures, leveraging techniques such as pulsed laser deposition, molecular beam epitaxy, and chemical vapor deposition. Her skills encompass advanced optical spectroscopy, including photoluminescence, Raman spectroscopy, and time-resolved carrier dynamics, enabling detailed insights into material properties. Prof. Iman Roqan has also mastered quantum dot synthesis, perovskite fabrication, and spintronic device engineering, applying her knowledge to develop UV optoelectronic and spin-optoelectronic devices with groundbreaking functionalities. She has successfully filed 11 patents, demonstrating her ability to translate laboratory discoveries into scalable industrial applications. Her collaborative skills extend globally, working with leading research groups in the UK, USA, Japan, France, South Korea, and China, where she contributes to multidisciplinary projects in nanophotonics, quantum materials, and spectroscopy. As an editorial board member and reviewer for prestigious scientific journals, she maintains deep involvement in evaluating cutting-edge research. Prof. Iman Roqan’s combination of experimental expertise, analytical capability, and leadership in innovation establishes her as a leading figure driving advances in semiconductor science and optoelectronic technologies worldwide.
Awards and Honors
Prof. Iman Roqan has received numerous prestigious awards and recognitions that reflect her global impact in semiconductor physics, spectroscopy, and material science. She is the recipient of the International Teaching Award from the American Association of Physics Teachers (AAPT) and the American Physical Society (APS), recognizing her outstanding contributions to physics education and mentorship. She has also been honored with the Young Scientist Award by the VENUS International Foundation, India, and the IAAM Fellow Lecture Award by the International Association of Advanced Materials, Sweden. Prof. Iman Roqan’s work on UV optoelectronic devices earned her a special award from the Advanced UV for Life Association, Germany, highlighting her contributions to energy-efficient deep-UV photonic technologies. Additionally, she has been featured in the MRS Bulletin for establishing state-of-the-art spectroscopy laboratories in Saudi Arabia, advancing both research infrastructure and talent development. Under her mentorship, her students have also achieved international recognition, including awards at the International Science and Engineering Fair (ISEF). Her editorial appointments with ACS Applied Electronic Materials and Materials Science & Engineering International Journal further underscore her leadership within the global research community. These achievements collectively demonstrate Prof. Roqan’s exceptional contributions, pioneering discoveries, and lasting influence on the fields of nanotechnology, spintronics, and photonic device engineering.
Publications Top Notes
Title: Investigation of ultrathin surface passivation layers for GaN: A comparative analysis of Al2O3, SiO2, and SiNx in reducing surface recombination
Year: 2025
Title: Carrier Dynamics and Structural Analyses of Orange/Red In-Rich InGaN Double-Quantum Wells LED Hybridized by Blue InGaN Single-Quantum Well
Year: 2025
Title: Uniform blue emitting carbon nanodots synthesized from fig fruit using reverse diffusion purification
Year: 2024
Citation: 1
Title: Enhancement the performance of MAPbI3 perovskite solar cells via germanium sulfide doping
Year: 2024
Citation: 3
Title: Enhanced Electronic Structure, Phase, and Morphology of a CH3NH3PbI3 Perovskite Solar Cell Using Vanadium Copper Sulfide (VCuS) Nanoparticle Treatment
Year: 2024
Citation: 2
Conclusion
Prof. Iman Roqan stands as a pioneering figure in semiconductor physics, optoelectronics, and spectroscopy, making transformative contributions to materials science and photonics on a global scale. Her groundbreaking research on III-Nitride materials, quantum nanostructures, spin-optoelectronic devices, and UV LEDs has opened new avenues for high-performance, scalable, and cost-effective technologies. As a Professor and Head of the Semiconductor and Material Spectroscopy Group at KAUST, she has built world-class research facilities, fostered multidisciplinary collaborations, and guided future scientists through innovative mentorship. With 121 refereed publications, 11 patents, and over 5,365 citations, Prof. Iman Roqan’s scientific influence is recognized internationally. Her leadership extends beyond research, serving in editorial roles, conference committees, and global professional organizations, strengthening the bridge between academia and industry. Her achievements demonstrate an unwavering commitment to advancing optoelectronic technologies, enabling impactful innovations across energy, communication, and healthcare sectors. Prof. Iman Roqan’s nomination for the Best Researcher Award celebrates her outstanding contributions, exceptional academic excellence, and dedication to shaping the future of semiconductor science and nanophotonics. Through her vision and innovation, she continues to inspire researchers worldwide and transform the landscape of next-generation materials and device engineering.