Young Scientist Award
Monika Shrivastav
Universidad de Santiago de Chile, Chile
Monika Shrivastav has developed a research portfolio in semiconductor materials, Schottky devices, and energy-related electronic materials, contributing to the understanding of device fabrication, characterization techniques, and functional material performance. Her publication record and citation metrics indicate continued research activity within the interdisciplinary field of energy devices. The Young Scientist Award recognizes researchers who have demonstrated significant scholarly promise through sustained scientific contributions, publication quality, research impact, and professional engagement during the early stages of their academic careers. [1]
Abstract
Monika Shrivastav’s academic work focuses on semiconductor materials, Schottky contacts, thin-film characterization, and energy-related electronic devices. Her publications examine material synthesis, interface engineering, and electrical performance with applications in advanced electronic and energy technologies. The combination of peer-reviewed publications, measurable citation impact, and international research visibility supports her recognition within the emerging generation of scientists.[2]
Keywords
Young Scientist Award; Energy Devices; Semiconductor Materials; Schottky Devices; Electronic Materials; Research Excellence
Introduction
The Young Scientist Award highlights researchers whose scientific activities demonstrate originality, methodological rigor, and measurable academic influence. Evaluation commonly considers publication quality, citation performance, international collaboration, and continuing research productivity. Within this context, Monika Shrivastav’s research reflects interdisciplinary engagement across materials science, electronics, and energy technologies.[3]
Research Profile
Affiliated with Universidad de Santiago de Chile, Monika Shrivastav has established research interests centered on semiconductor device fabrication, electrical characterization, interface engineering, and functional materials for energy applications. Her scholarly output includes twenty-four indexed publications with one hundred eighty-seven citations and an h-index of nine, indicating sustained academic engagement and growing research visibility.[1]
Research Contributions
- Research on semiconductor materials and Schottky junction technologies.
- Development of characterization methods for electronic and energy devices.
- Investigation of material interfaces influencing electrical performance.
- Contribution to peer-reviewed scientific literature in energy device research.
- Participation in international academic collaborations and dissemination activities.
Publications
The researcher’s publication portfolio comprises peer-reviewed journal articles focused on semiconductor materials, electronic device physics, thin-film technologies, and energy device applications. Representative publications include studies indexed in international citation databases and include research associated with digital object identifiers (DOIs).[4]
Research Impact
Current bibliometric indicators include twenty-four indexed publications, one hundred eighty-seven citations, and an h-index of nine. These metrics demonstrate measurable scholarly visibility while reflecting consistent research dissemination in internationally recognized scientific venues. Citation performance provides evidence that the published work has contributed to ongoing developments within semiconductor and energy device research.[1]
Award Suitability
Based on publicly available scholarly indicators, Monika Shrivastav demonstrates characteristics commonly associated with early-career scientific recognition. Her publication record, citation profile, specialization in energy devices, and continued contribution to semiconductor research collectively support consideration for the Young Scientist Award. This assessment reflects observable academic achievements rather than predictive or promotional statements.[5]
Conclusion
Monika Shrivastav has established an emerging research profile characterized by contributions to semiconductor materials, Schottky devices, and energy-related electronic systems. Her publication record, citation metrics, and sustained scholarly engagement illustrate continued scientific development. These accomplishments align with the objectives of academic recognition programs that acknowledge promising researchers demonstrating measurable research quality and impact.
External Links
References
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- Elsevier. (n.d.). Scopus author details: Monika Shrivastav, Author ID 57972013800. Scopus.
https://www.scopus.com/authid/detail.uri?authorId=57972013800
- M Shrivastav., H Galriya., et al. (2025). Enhancement in ORR Performance by Compositing Ni-Decorated MoS2 with rGO for Alkaline Fuel Cells.
https://link.springer.com/article/10.1007/s12678-024-00921-7
- C Kumar., M Shrivastav., et al. (2025). Growth dynamics and surface scaling of air-oxidized NiO thin films from sputtered Ni.
https://www.sciencedirect.com/science/article/pii/S0042207X25010292
- C Kumar., M Shrivastav., et al. (2026). Spatial complexity and local slope controls morphology-wettability coupling in plasma-engineered AgO thin films.
https://www.sciencedirect.com/science/article/pii/S0272884226004670
- C Kumar., M Shrivastav., et al. (2025). Fractal surface roughness effects on CdS/Si Schottky-diodes.
https://www.sciencedirect.com/science/article/pii/S0167577X2501328X