Best Researcher Award
Monika Shrivastav
Universidad de Santiago de Chile
Monika Shrivastav is a researcher whose scholarly activities demonstrate sustained scientific quality, measurable research impact, and meaningful contributions to semiconductor materials and Schottky device technologies. Her research has contributed to the advancement of electronic materials, characterization methods, and device performance. Through her published work, citation record, and international research visibility, she has established a profile that reflects continued academic engagement and consistent research productivity. These achievements align with the principles recognized by the Best Researcher Award, which honors researchers who demonstrate excellence, innovation, and lasting contributions within their respective disciplines.[1][2]
Abstract
Monika Shrivastav has developed an academic portfolio focused on semiconductor physics and Schottky device research. Her work emphasizes material characterization, fabrication techniques, electrical behavior, and device optimization for electronic applications. Through peer-reviewed publications, citation performance, and continued participation in international research activities, she has contributed to the advancement of semiconductor science and engineering.[1][3]
Keywords
Schottky Devices, Semiconductor Materials, Electronic Devices, Thin Films, Device Characterization, Materials Science, Semiconductor Engineering, Electrical Properties, Research Excellence, Best Researcher Award.
Introduction
Research involving semiconductor materials and Schottky devices plays a significant role in modern electronics, sensing technologies, and energy-efficient systems. Advances in fabrication methods and material characterization contribute to improved device reliability, switching performance, and electronic functionality. Monika Shrivastav’s research activities align with these objectives by examining material behavior and electronic interfaces relevant to semiconductor device development.[3]
Research Profile
The research profile demonstrates consistent scholarly productivity with publications indexed in international databases. According to available citation metrics, the profile includes 24 indexed publications, 187 citations, and an h-index of 9, reflecting measurable academic influence within semiconductor and materials research.[1]
- Semiconductor materials research
- Schottky device characterization
- Electronic material interfaces
- Thin-film device investigations
- Materials and electronic engineering applications
Research Contributions
The published research addresses electrical transport mechanisms, interface characteristics, semiconductor fabrication, and material optimization. These investigations contribute to the understanding of electronic device performance and support the continued development of semiconductor technologies for scientific and industrial applications.[2][4]
Publications
The research record consists of peer-reviewed journal publications indexed by international bibliographic databases. The publications collectively examine semiconductor devices, Schottky contacts, thin-film technologies, and electronic materials characterization while supporting reproducible scientific methodologies.[1][5]
Research Impact
Citation indicators and publication metrics demonstrate that the research has received scholarly attention within the semiconductor research community. Continued citation activity indicates that the published findings contribute to ongoing investigations involving device engineering, electronic materials, and semiconductor physics.[1]
Award Suitability
Based on documented publication output, citation performance, international research visibility, and contributions to semiconductor science, Monika Shrivastav demonstrates characteristics commonly considered during evaluations for academic recognition. The research profile reflects sustained scholarly engagement, measurable scientific productivity, and continued contributions within the field of Schottky device research.[1][2]
Conclusion
Monika Shrivastav’s scholarly record reflects continued participation in semiconductor and electronic materials research. Through peer-reviewed publications, citation impact, and investigations focused on Schottky devices, the researcher has contributed to scientific understanding within the discipline. These achievements align with the principles of the Best Researcher Award, recognizing sustained academic excellence, research quality, and measurable scientific contribution.[1]
External Links
References
- Elsevier. (n.d.). Scopus author details: Monika Shrivastav, Author ID 57972013800. Scopus.
https://www.scopus.com/authid/detail.uri?authorId=57972013800
- M Shrivastav., H Galriya., et al. (2025). Enhancement in ORR Performance by Compositing Ni-Decorated MoS2 with rGO for Alkaline Fuel Cells.
https://link.springer.com/article/10.1007/s12678-024-00921-7
- C Kumar., M Shrivastav., et al. (2025). Growth dynamics and surface scaling of air-oxidized NiO thin films from sputtered Ni.
https://www.sciencedirect.com/science/article/pii/S0042207X25010292
- C Kumar., M Shrivastav., et al. (2026). Spatial complexity and local slope controls morphology-wettability coupling in plasma-engineered AgO thin films.
https://www.sciencedirect.com/science/article/pii/S0272884226004670
- C Kumar., M Shrivastav., et al. (2025). Fractal surface roughness effects on CdS/Si Schottky-diodes.
https://www.sciencedirect.com/science/article/pii/S0167577X2501328X